POWER SEMICONDUCTOR DEVICE

摘要

The present disclosure relates to a power semiconductor device which includes: a first semiconductor region of a first conductive type; a second semiconductor region of a second conductive type which is formed on the upper side of the first semiconductor region; a third semiconductor region of the first conductive type which is formed on the upper inside of the second semiconductor region; and a trench gate which passes through from the third semiconductor region to the first semiconductor region. A part of at least one of the first semiconductor region, the second semiconductor region, and the third semiconductor region is made of a device protection material with a conduction band which has a principal state and a satellite state in an E-k diagram. In the E-k diagram of the device protection material, the curvature of the satellite state is lower than the curvature of the principal state.