发明名称 |
Flash memory controller |
摘要 |
A flash memory controller includes a recording medium and a processing circuit. When the amount of stored data in a flash memory module is less than a first threshold, the processing circuit controls a read and write circuit of the flash memory module to program a target data block using program threshold voltages within a first voltage range so as to write data into the target data block. When the amount of stored data in the flash memory module is greater than a second threshold, the processing circuit controls the read and write circuit to program the target data block using program threshold voltages within a second voltage range so as to write data into the target data block, wherein the second threshold is greater than the first threshold and the first voltage range is less than the second voltage range. |
申请公布号 |
US9075709(B2) |
申请公布日期 |
2015.07.07 |
申请号 |
US201213491377 |
申请日期 |
2012.06.07 |
申请人 |
Silicon Motion, Inc. |
发明人 |
Yang Tsung-Chieh;Kuo Chun-Chieh;Lin Ching-Hui;Shen Yang-Chih |
分类号 |
G11C16/04;G06F12/02 |
主分类号 |
G11C16/04 |
代理机构 |
Birch, Stewart, Kolasch & Birch, LLP |
代理人 |
Birch, Stewart, Kolasch & Birch, LLP |
主权项 |
1. A flash memory controller comprising:
a communication interface for receiving a first data, a second data, and a third data; a recording medium for recording an amount of stored data in a flash memory module, wherein the flash memory module comprising a read and write circuit, a first data block, a second data block, and a third data block; and a processing circuit, coupled with the communication interface, the recording medium, and the flash memory module, for controlling the read and write circuit to configure program threshold voltages of at least one cell in the first data block to be within a first voltage range so as to write the first data into the first data block when the amount of stored data in a flash memory module is less than a first threshold, and for controlling the read and write circuit to configure program threshold voltages of at least one cell in the third data block to be within a second voltage range so as to write the third data into the third data block when the amount of stored data in the flash memory module is greater than a second threshold; wherein the second threshold is greater than the first threshold and the first voltage range is less than the second voltage range. |
地址 |
Zhubei TW |