HEMT structure with iron-doping-stop component and methods of forming

摘要

An iron-doped high-electron-mobility transistor (HEMT) structure includes a substrate, a nucleation layer over the substrate, and a buffer layer over the nucleation layer. The gallium-nitride buffer layer includes a iron-doping-stop layer having a concentration of iron that drops from a juncture with an iron-doped component of the buffer layer over a thickness that is relatively small compared to that of the iron-doped component. The iron-doping-stop layer is formed at lower temperature compared to the temperature at which the iron-doped component is formed. The iron-doped HEMT structure also includes a channel layer over the buffer layer. A carrier-supplying barrier layer is formed over the channel layer.

主权项

1. An iron-doped high electron-mobility transistor structure, comprising:
a) a substrate; b) a nucleation layer over the substrate; c) a buffer layer over the nucleation layer, said buffer layer including,
i) an iron-doped layer over the nucleation layer;ii) an iron-doping-stop layer adjoining the iron-doped layer at a juncture, the iron-doping-stop layer having an iron concentration below about 1×1016 cm−3 at a surface distal to the juncture with the iron-doped layer, and wherein the iron-doping stop layer has an average thickness in a range of between about 1 nm and about 100 nm d) a channel layer over the buffer layer; and e) a carrier-supplying barrier layer over the channel layer.