Method and device for manufacturing semiconductor compound materials by means of vapour phase epitaxy

摘要

A semiconductor compound material, preferably a III-N-bulk crystal or a III-N-layer, is manufactured in a reactor by means of hydride vapor phase epitaxy (HVPE), wherein in a mixture of carrier gases a flow profile represented by local mass flow rates is formed in the reactor. The mixture can carry one or more reaction gases towards a substrate. Thereby, a concentration of hydrogen important for the reaction and deposition of reaction gases is adjusted at the substrate surface independently from the flow profile simultaneously formed in the reactor.

主权项

1. A method for manufacturing a semiconductor compound material using hydride vapour phase epitaxy (HVPE) in a vertical reactor, comprising the steps of:
(a) introducing a mixture of carrier gases into the vertical reactor via concentrically arranged gas inlets to carry one or more reaction gases in a direction towards a substrate; (b) determining a volume flow of hydrogen as a first carrier gas in the mixture to set a predetermined value for the concentration of hydrogen at a point near a surface of a substrate; and (c) compensating for an influence exerted from step (b) on at least one of the concentrically arranged gas inlets in a laminar flow profile represented by a distribution of local mass flow rates in each of said concentrically arranged gas inlets in the reactor by determining corresponding volume flow proportions of a second and a third carrier gases in the mixture in at least another one of the concentrically arranged gas inlets.