发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>The present invention relates to a method for manufacturing a semiconductor device, comprising the steps of: preparing a substrate made of SiC; depositing crystalloid or amorphous Si on one surface of the substrate, and forming a first semiconductor layer; and performing heat treatment in the presence of nitrogen, and forming a second semiconductor layer made of SiCN between the substrate and the first semiconductor layer.</p> |
申请公布号 |
KR20150076769(A) |
申请公布日期 |
2015.07.07 |
申请号 |
KR20130165332 |
申请日期 |
2013.12.27 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
PARK, JAE HOON;SONG, IN HYUK;JANG, CHANG SU;UM, KEE JU |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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