发明名称 Solid-state image pickup device, method for driving solid-state image pickup device, and image pickup apparatus
摘要 A solid-state image pickup device includes a pixel array section including an effective pixel region, an optical black pixel region, and a pixel region between the effective pixel region and the optical black pixel region; a vertical drive section which performs driving so that signals of pixels of the pixel region disposed at a side of the effective pixel region in a vertical direction are skipped and signals of pixels of the effective pixel region and the optical black pixel region are read; and a horizontal drive section which performs driving so that, from among the pixels selected by the vertical drive section, the signals of the pixels of the pixel region disposed at a side of the effective pixel region in a horizontal direction are skipped and the signals of the pixels of the effective pixel region and the optical black pixel region are read.
申请公布号 US9077920(B2) 申请公布日期 2015.07.07
申请号 US201213451021 申请日期 2012.04.19
申请人 Sony Corporation 发明人 Suzuki Ryoji;Toyama Takayuki;Mishina Koji;Tsuchiya Hiroyuki
分类号 H04N5/374;H04N5/361;H04N5/357 主分类号 H04N5/374
代理机构 Fishman Stewart Yamaguchi PLLC 代理人 Fishman Stewart Yamaguchi PLLC
主权项 1. A solid-state image pickup device comprising: a semiconductor substrate having a top surface, a doped region of the semiconductor substrate being of a first conductivity type; a first well region of a second conductivity type touching said top surface and a second well region of the second conductivity type, said second well region touching said first well region and said doped region; an accumulation layer of the second conductivity type touching said top surface and a first layer of the first conductivity type, said first layer touching said accumulation layer and said second well region, wherein an impurity concentration of the second conductivity type in said second well region is lower than an impurity concentration of the second conductivity type in said first well region, said first well region touching said accumulation layer and said first layer; a floating diffusion unit of the first conductivity type extending from said to surface into said first well region; wherein a transfer channel is a portion of the first well region, said transfer channel being between said first layer and said floating diffusion unit.
地址 Tokyo JP