Operation for non-volatile storage system with shared bit lines

摘要

A non-volatile storage system is disclosed that includes pairs of NAND strings (or other groupings of memory cells) in the same block being connected to and sharing a common bit line. To operate the system, two selection lines are used so that the NAND strings (or other groupings of memory cells) sharing a bit line can be selected at the block level. Both selection lines are connected to a selection gate for each of the NAND strings (or other groupings of memory cells) sharing the bit line. One set of embodiments avoid unwanted boosting during read operations by keeping the channels of the memory cells connected to word lines on the drain side of the selected word line biased at a fixed potential.

主权项

1. A method of reading non-volatile storage, comprising:
electrically selecting one group of non-volatile storage elements for each bit line of a plurality of bit lines in a system that includes multiple groups of non-volatile storage elements in a common block being connected to each bit line of the plurality of bit lines, each group of non-volatile storage elements comprises multiple connected non-volatile storage elements and a drain side select gate; applying an unselected voltage to unselected word lines; using drain side select gates to apply a first voltage from bit lines to channels of non-volatile storage elements that are connected to word lines on a drain side of a selected word line and that are in a plurality of unselected groups of non-volatile storage elements; and applying a read compare voltage to the selected word line and sensing non-volatile storage elements that are connected to the selected word line and that are in selected groups of non-volatile storage elements.