Method of reprogramming nonvolatile memory comprising marking some cells as blanks

摘要

A method of operating a memory device includes programming a first data signal to a first memory cell, attempting to program a second data signal to the first memory cell in a state where the first memory cell is not erased, and marking the first memory cell as blank upon failing to program the second data signal to the first memory cell.

主权项

1. A method of operating a nonvolatile memory device, comprising:
performing a first program operation to program a first data signal in a first memory cell, wherein the first data signal is programmed as a first program state having a first threshold voltage range; determining whether a second data signal corresponds to a program state having a threshold voltage range lower than the first threshold voltage range; and upon determining that the second data signal corresponds to a program state having a threshold voltage range lower than the first threshold voltage range, performing a second program operation to program a blanking signal in the first memory cell, wherein the blanking signal is programmed as a blank state having a second threshold voltage range greater than the first threshold voltage range.