| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory control device, memory control method, and program, in which writing to a nonvolatile memory can be performed at high speed.SOLUTION: A first state, in which a predetermined value is written in the whole of a predetermined region in a nonvolatile memory, is defined as flag information which indicates that a processing device is not in a predetermined state. In addition, a second state, in which a value corresponding to information for specifying that the processing device is in the predetermined state is written in a part of the predetermined storage region, is defined as flag information which indicates that the processing device is in the predetermined state. The flag information corresponding to either the first state or second state is stored in the nonvolatile memory. |
