| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method useful for forming a fine pattern.SOLUTION: A resist composition that shows decrease in solubility with an organic solvent by exposure is used and patterned by negative development using a developer containing an organic solvent to form a first resist pattern (a pattern composed of a plurality of exposure portions 2a) on a support body 1. A composition for pattern reversal containing an organic solvent that does not dissolve the first resist pattern is applied on the support body 1 where the first resist pattern is formed so as to form a film 6 for pattern reversal. The film 6 for pattern reversal is patterned by alkali development while removing the first resist pattern so as to form a pattern with a reversed image of the first resist pattern. |
