| 发明名称 |
METHOD OF FORMING TRENCH ON FINFET AND FINFET THEREOF |
| 摘要 |
A method is provided for forming a trench on a FinFET. In an exemplary embodiment, a first inter-layer dielectric layer is formed between a first gate and a second gate of the FinFET in an interposed manner. A second inter-layer dielectric layer is formed above the first inter-layer dielectric layer, the first gate of the FinFET, and the second gate of the FinFET. A photoresist layer is formed above the second inter-layer dielectric layer. And part of the second inter-layer dielectric layer that is not below the photoresist layer is etched. |
| 申请公布号 |
US2015187890(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201314141619 |
申请日期 |
2013.12.27 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
TSAU HSUEH-WEN;LEE CHIA-CHING;KHADERBAD MRUNAL A.;LEE DA-YUAN |
| 分类号 |
H01L29/40;H01L29/66;H01L29/423;H01L29/78 |
主分类号 |
H01L29/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a trench on a fin field effect transmitter (FinFET), comprising:
forming a first inter-layer dielectric layer between a first gate and a second gate of the FinFET in an interposed manner; forming a second inter-layer dielectric layer above the first inter-layer dielectric layer, the first gate of the FinFET, and the second gate of the FinFET; patterning a photoresist layer over the second inter-layer dielectric layer; and etching part of the second inter-layer dielectric layer that is not below the photoresist layer. |
| 地址 |
Hsinchu TW |
