METHODS OF FORMING A MAGNETIC RANDOM ACCESS MEMORY ETCH SPACER AND STRUCTURES FORMED THEREBY

摘要

Methods of forming a memory device structure are described. Those methods may include forming a non-conductive spacer material on a top electrode of a magnetic tunnel junction structure, and then forming a highly selective material on the non-conductive spacer material of the magnetic tunnel junction prior to etching a bottom electrode of the magnetic tunnel junction.