HIGH-K / METAL GATE CMOS TRANSISTORS WITH TiN GATES

摘要

An integrated circuit with a thick TiN metal gate with a work function greater than 4.85 eV and with a thin TiN metal gate with a work function less than 4.25 eV. An integrated circuit with a replacement gate PMOS TiN metal gate transistor with a workfunction greater than 4.85 eV and with a replacement gate NMOS TiN metal gate transistor with a workfunction less than 4.25 eV. An integrated circuit with a gate first PMOS TiN metal gate transistor with a workfunction greater than 4.85 eV and with a gate first NMOS TiN metal gate transistor with a workfunction less than 4.25 eV.

主权项

1. A process of forming an integrated circuit, comprising the steps of:
forming a thick TiN layer in both a PMOS transistor area and an NMOS transistor area; annealing the thick TiN layer in oxygen to raise a work function to greater than 4.85 eV; after annealing, removing the thick TiN layer in the NMOS transistor area; and after removing the thick TiN layer, forming a thin TiN layer in both the PMOS transistor area and in the NMOS transistor area, the thin TiN layer being thinner than the thick TiN layer and having a reduced oxygen concentration to result in a work function of less than 4.25 eV in the NMOS transistor area.