| 发明名称 |
METAL-INSULATOR-METAL (MIM) CAPACITOR TECHNIQUES |
| 摘要 |
Some embodiments relate to a metal-insulator-metal (MIM) capacitor. The MIM capacitor includes a capacitor bottom metal (CBM) electrode, a high-k dielectric layer arranged over the CBM electrode, and a capacitor top metal (CTM) electrode arranged over the high-k dielectric layer. A capping layer is arranged over the CTM electrode. A lower surface of the capping layer and an upper surface of the CTM electrode meet at an interface. Protective sidewalls are adjacent to outer sidewalls of the CTM electrode. The protective sidewalls have upper surfaces at least substantially aligned to the interface at which the upper surface of the CTM electrode meets the lower surface of the capping layer. |
| 申请公布号 |
US2015187864(A1) |
申请公布日期 |
2015.07.02 |
| 申请号 |
US201414242227 |
申请日期 |
2014.04.01 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Chang Yao-Wen;Lin Hsing-Lien;Tsai Cheng-Yuan;Tsai Chia-Shiung |
| 分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A metal-insulator-metal (MIM) capacitor, comprising:
a capacitor bottom metal (CBM) electrode; a high-k dielectric layer arranged over the CBM electrode; a capacitor top metal (CTM) electrode arranged over the high-k dielectric layer; a capping layer arranged over the CTM electrode, wherein a lower surface of the capping layer and an upper surface of the CTM electrode meet at an interface; and protective sidewalls adjacent to outer sidewalls of the CTM electrode, the protective sidewalls having upper surfaces at least substantially aligned to the interface at which the upper surface of the CTM electrode meets the lower surface of the capping layer. |
| 地址 |
Hsin-Chu TW |
