| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a memory circuit that uses a write auxiliary voltage boost.SOLUTION: Within a memory circuit 2 comprising an array 4 of a bit cell 6, a write driver circuit 14 uses a boost write signal that is boosted to a lower level than a normal level during a write operation. A column selection transistor 16 is driven by a column selection circuit 12. When a column is unselected, a column selection signal is boosted to the lower level than the normal level, and the column selection signal is boosted to a higher level than the normal level when the column is selected. A voltage boost circuit such as a selection charge pump 20 and non-selection charge pump 22 is employed within the column select circuit 12 for achieving these boost levels for the column selection signal.</p> |
