发明名称 |
NITRIDE SEMICONDUCTOR DEVICE |
摘要 |
Provided is a nitride semiconductor device including: a substrate having through via holes; first and second nitride semiconductor layers sequentially stacked on the substrate; drain electrodes and source electrodes provided on the second nitride semiconductor layer; and an insulating pattern provided on the second nitride semiconductor layer, the insulating pattern having upper via holes provided on the drain electrodes, wherein the through via holes are extended into the first and second nitride semiconductor layers and expose a bottom of each of the source electrodes. |
申请公布号 |
US2015187886(A1) |
申请公布日期 |
2015.07.02 |
申请号 |
US201414311675 |
申请日期 |
2014.06.23 |
申请人 |
Electronics and Telecommunications Research Institute |
发明人 |
PARK Young Rak;KO Sang Choon;CHANG Woojin;MUN Jae Kyoung;BAE Sung-Bum |
分类号 |
H01L29/20;H01L29/49;H01L29/417;H01L29/205 |
主分类号 |
H01L29/20 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Daejeon KR |