发明名称 NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY SYSTEM INCLUDING THE SAME, AND METHOD OF OPERATING THE SAME
摘要 A nonvolatile memory device includes a memory cell array having a normal area and a temporary area. A page buffer stores data to be written to the normal area in a normal program operation and store a temporary data to be written to the temporary area in a temporary program operation. A control logic performs the normal program operation including a plurality of program loops. The control logic receives a suspend command before the normal program operation is completed and determines, in response to the suspend command, whether to complete the normal program operation or to suspend the normal operation and perform the temporary program operation based on a reference value representing a time for performing at least one program loop of the plurality of program loops.
申请公布号 US2015186042(A1) 申请公布日期 2015.07.02
申请号 US201414477347 申请日期 2014.09.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE ChulHo
分类号 G06F3/06 主分类号 G06F3/06
代理机构 代理人
主权项 1. A nonvolatile memory device comprising: a memory cell array including a normal area and a temporary area; a page buffer configured to store data to be written to the normal area in a normal program operation and store temporary data to be written to the temporary area in a temporary program operation; a control logic configured to perform the normal program operation including a plurality of program loops, to receive a suspend command before the normal program operation is completed, to determine, in response to the suspend command, whether to complete the normal program operation or whether to suspend the normal program operation and perform the temporary program operation based on a reference value representing a time for performing at least one program loop of the plurality of program loops.
地址 Suwon-si KR