| 摘要 |
According to an embodiment of the present invention, an active matrix substrate manufacturing method includes: a step (a) for forming a thin film transistor (10) on a substrate (11); a step (b) for forming an interlayer insulating layer (22) that covers the thin film transistor; a step (c) for forming a first electrode (32p) after the step (b); a step (d) for forming, after the step (c), a photo spacer (38) by performing patterning by applying a photosensitive resin material on the substrate; and a step (e) for performing, after the step (d), plasma processing using a gas, which contains a fluorine-based gas but does not contain oxygen gas. |
