IGZO Devices with Reduced Electrode Contact Resistivity and Methods for Forming the Same

摘要

Embodiments described herein provide indium-gallium-zinc oxide (IGZO) devices, such as IGZO thin-film transistors (TFTs), and methods for forming such devices. A substrate is provided. A gate electrode is formed above the substrate. An IGZO channel layer is formed above the gate electrode. A contact layer is formed above the IGZO channel layer. The contact layer includes arsenic. A source electrode and a drain electrode are formed above the contact layer.

主权项

1. A method for forming an indium-gallium-zinc oxide (IGZO) device, the method comprising:
providing a substrate; forming a gate electrode above the substrate; forming a first IGZO channel layer above the gate electrode; forming a contact layer above the first IGZO channel layer, wherein the contact layer comprises arsenic; and forming a source electrode and a drain electrode above the contact layer.