SURFACE-CONTROLLED SEMICONDUCTOR NANO-DEVICES, METHODS AND APPLICATIONS

摘要

Semiconductor structures and semiconductor devices may include: (1) an n-type compound semiconductor material having a surface Fermi level pinned to a conduction band of the n-type compound semiconductor material; (2) a p-type compound semiconductor material having a surface Fermi level pinned to a valence band of the p-type compound semiconductor material; and/or (3) an i-type compound semiconductor materials having a surface Fermi level pinned within a band gap of the i-type compound semiconductor material. Semiconductor structures and semiconductor devices in accordance with the foregoing n-type, p-type and i-type compound semiconductor materials provide the semiconductor structures and semiconductor devices with enhanced performance.

主权项

1. A semiconductor structure comprising:
a first semiconductor layer and a second semiconductor layer located in contact over a substrate and comprising different dopant concentrations of one of:
a surface controlled n-type compound semiconductor material having a surface Fermi level pinned near to a conduction band of the surface controlled n-type compound semiconductor material; anda surface controlled p-type compound semiconductor material having a surface Fermi level pinned near to a valence band of the surface controlled p-type compound semiconductor material.