| 摘要 |
A photosensitive resin composition including an alkali-soluble polymer (A), a compound (B) having an ethylenic unsaturated double bond, and a photopolymerization initiator (C). In a resist pattern obtained by forming a photosensitive resin layer comprising the photosensitive resin composition, upon a substrate surface and exposing and developing same, the difference is less than 15 µm between: a pattern resolution (a) when the focal point is positioned on the substrate surface and the pattern is exposed; and a pattern resolution (b) obtained when the focal point position is displaced from the substrate surface by 300 µm in the thickness direction of the substrate. |
