发明名称 MWT ARCHITECTURE FOR THIN SI SOLAR CELLS
摘要 Methods of fabricating metal wrap through solar cells and modules for thin silicon solar cells, including epitaxial silicon solar cells, are described. These metal wrap through solar cells have a planar back contact geometry for the base and emitter contacts. Fabrication of a metal wrap through solar cell may comprise: providing a photovoltaic device attached at the emitter side of the device to a solar glass by an encapsulant, the device including busbars on the device emitter; forming vias through the device base and emitter, the vias terminating in the busbars; depositing a conformal dielectric film over the surface of the vias and the back surface of the base; removing portions of the conformal dielectric film from the ends of the vias for exposing the busbars and from field areas of the base; and forming separate electrical contacts to the busbars and the field areas on the back surface of the solar cell. The solar cells may comprise epitaxially deposited silicon and may include an epitaxially deposited back surface field.
申请公布号 US2015187966(A1) 申请公布日期 2015.07.02
申请号 US201414536125 申请日期 2014.11.07
申请人 Crystal Solar, Inc. 发明人 Asthana Ashish;Ravi Tirunelveli S.;Ravi Kramadhati V.;Nag Somnath
分类号 H01L31/0224;H01L31/0392;H01L31/0216;H01L31/18 主分类号 H01L31/0224
代理机构 代理人
主权项 1. A method of fabricating a metal wrap through solar cell comprising: forming blind vias in the front surface of a base layer; forming an emitter on the front surface of said base layer; depositing an antireflective coating over said emitter; filling said blind vias with electrically conductive material; depositing busbars over the front surface of said base layer, said busbars being configured to connect to said filled blind vias; attaching the front surface of said processed base layer to solar glass using an encapsulant; forming vias from the back surface of said base layer through said base layer, said vias terminating in said filled blind vias; depositing a conformal dielectric film over the surface of said vias and the back surface of said base; removing portions of said conformal dielectric film from the ends of said vias for exposing said filled blind vias and from field areas of said base; and forming separate electrical contacts to said filled blind vias and said field areas, wherein said separate electrical contacts are all accessible on the back surface of said solar cell.
地址 Santa Clara CA US