发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
To provide a semiconductor device including a transistor in which an oxide semiconductor is used and on-state current is high. In a semiconductor device including a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion, the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure in which conductive films serving as a gate electrode, a source electrode, and a drain electrode do not overlap. Furthermore, in an oxide semiconductor film, an impurity element is contained in a region which does not overlap with the gate electrode, the source electrode, and the drain electrode. |
申请公布号 |
WO2015097597(A1) |
申请公布日期 |
2015.07.02 |
申请号 |
WO2014IB66995 |
申请日期 |
2014.12.17 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;KOEZUKA, JUNICHI;JINTYOU, MASAMI;SHIMA, YUKINORI;HAMOCHI, TAKASHI;NAKAZAWA, YASUTAKA |
分类号 |
H01L29/786;G02F1/1345;G02F1/1368;H01L21/28;H01L21/336;H01L29/41;H01L51/50;H05B33/14 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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