One-transistor floating-body DRAM devices having vertical channel transistor structure and methods of fabricating the same,申请号KR20050037244-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	One-transistor floating-body DRAM devices having vertical channel transistor structure and methods of fabricating the same
摘要
申请公布号	KR100702014(B1)	申请公布日期	2007.03.30
申请号	KR20050037244	申请日期	2005.05.03
申请人		发明人
分类号	H01L27/108;H01L29/78	主分类号	H01L27/108
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Low-cost, steerable, phased array antenna

EXPANDED CONFECTIONERY

Watermarking in video transmissions

CAUCHO NATURAL QUE CONTIENE NANOCARBONO

CONECTOR PARA TUBERIAS

ADITIVO COMPATIBLE CON ARCILLA PARA PRODUCTOS QUIMICOS PARA LA CONSTRUCCION

NAILING ACCESSORY ADAPTABLE TO DIGGING TOOLS

INRICHTING TEN BEHOEVE VAN DE WEGBEDEKKING BIJ EEN OVERSTEEKPLAATS.

POLYALKYLENE CARBONATE RESIN MOLDED ARTICLE COMPRISING POLYLACTIDE PARTICLES

METHOD AND SYSTEM FOR CONTROLING DEVICE USING WIRELESS COMMUNICATION

Modified Straw Loading Method for Vitrification and Use thereof

LIGHT GUIDE PLATE AND BACKLIGHT UNIT HAVING THE SAME

WIRING DUCT CONNECTION DEVICE

APPARATUS FOR DEPOSITING AN ORGANIC LAYER

METHOD AND APPARATUS PROVIDING ENHANCED RADIO LINK CONTROL ACKNOWLEDGMENT

RESOURCES FOR MULTI-CELL CHANNEL STATE INFORMATION FEEDBACK

BUILDING MULTI-LANGUAGE PROCESSES FROM EXISTING SINGLE-LANGUAGE PROCESSES

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE