| 摘要 |
<p>A method for manufacturing a semiconductor component, comprising: providing a substrate (1); forming sequentially on the substrate (1) a semiconductor layer (2), a silicon attachment layer (3), and a photolithographic mask layer (4); etching on some regions on the silicon attachment layer (3) to form oblique sections along the crystal surface of silicon (111), constituting a trapezoidal groove with the crystal surface of non-etched silicon (100), until the semiconductor layer (2) is exposed; and finally, depositing a metal in the groove to form an electrode (5). The semiconductor component manufactured with the method utilizes anisotropic characteristics provided by the silicon attachment layer in the etching process to control and optimize the structure and shape of the electrode, allows for improved electric field distribution of the semiconductor layer, thus increasing the breakdown voltage of the component, and at the same time, also allows for effectively reduced electrode size of the component, thus further improving characteristics of the component such as frequency.</p> |
