发明名称 |
STACKED BI-LAYER AS THE LOW POWER SWITCHABLE RRAM |
摘要 |
<p>Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. The resistive switching nonvolatile memory cells may include a first layer disposed. The first layer may be operable as a bottom electrode. The resistive switching nonvolatile memory cells may also include a second layer disposed over the first layer. The second layer may be operable as a resistive switching layer that is configured to switch between a first resistive state and a second resistive state. The resistive switching nonvolatile memory cells may include a third layer disposed over the second layer. The third layer may be operable as a resistive layer that is configured to determine, at least in part, an electrical resistivity of the resistive switching nonvolatile memory element. The third layer may include a semi-metallic material. The resistive switching nonvolatile memory cells may include a fourth layer that may be operable as a top electrode.</p> |
申请公布号 |
WO2015100093(A1) |
申请公布日期 |
2015.07.02 |
申请号 |
WO2014US70767 |
申请日期 |
2014.12.17 |
申请人 |
INTERMOLECULAR, INC. |
发明人 |
WANG, YUN;NARDI, FEDERICO;WELING, MILIND |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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