SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

According to the present invention, an IGBT region is provided with: a collector layer; a first drift layer; a first body layer; an emitter layer; and a trench gate which penetrates through the first body layer from the surface side of a semiconductor substrate and reaches the first drift layer. A diode region is provided with: a cathode layer; a second drift layer; and a second body layer. A lifetime control region containing a peak of the crystal defect density is formed in the first drift layer and the second drift layer positioned between the surfaces of the first drift layer and the second drift layer and the depth of the lower end of the trench gate. A silicon nitride film layer is additionally provided above the trench gate on the surface side of the semiconductor substrate.