| 摘要 |
<p>The prevent invention includes a substrate (2) with a cavity (3). A cavity bottom wall is formed by a continuous substrate surface. A sensor includes a membrane (4) applied to receive heat from incident infrared radiation. A beam suspends the membrane (4) and thermocouple (9). This membrane includes openings (5,6) which are extended through the membrane for passing an anisotropic etchant for etching the cavity (3) in a manufacturing process. Each opening has a cross section with an aspect ratio of 4 or more. The width direction of each of first and second set openings is determined according to each of first and second crystallographic orientations (Y:Z). The orientations correspond to different directions on the loosely packed crystal lattice faces of a semiconductor substrate.</p> |
