发明名称 SUBSTRATE PROCESSING SYSTEM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
摘要 A substrate processing system includes a plurality of processing chambers accommodating substrates, a processing gas supply system configured to supply a processing gas sequentially into the plurality of processing chambers, a reactive gas supply system configured to supply an activated reactive gas sequentially into the plurality of processing chambers, a buffer tank installed at the processing gas supply system, and a control unit configured to control the processing gas supply system and the reactive gas supply system such that a time period of supplying the reactive gas into one of the plurality of processing chambers is equal to a sum of a time period of supplying the processing gas into the one of the plurality of processing chambers and a time period of supplying the processing gas into the buffer tank, and the processing gas and the reactive gas are alternately supplied into the plurality of processing chambers.
申请公布号 US2015187611(A1) 申请公布日期 2015.07.02
申请号 US201414228465 申请日期 2014.03.28
申请人 SATO Taketoshi 发明人 SATO Taketoshi
分类号 H01L21/67 主分类号 H01L21/67
代理机构 代理人
主权项 1. A substrate processing system comprising: a plurality of processing chambers accommodating substrates; a processing gas supply system configured to supply a processing gas into the plurality of processing chambers in sequence; a reactive gas supply system configured to supply an activated reactive gas into the plurality of processing chambers in sequence; a buffer tank installed at the processing gas supply system; a mass flow controller installed at a downstream side of the buffer tank; and a controller configured to control the processing gas supply system, the reactive gas supply system and the mass flow controller to alternately supply the processing gas and the reactive gas into each of the plurality of processing chambers in a manner that a time period of supplying the reactive gas into one of the plurality of processing chambers is equal to a sum of a time period of supplying the processing gas into the one of the plurality of processing chambers and a time period of supplying the processing gas into the buffer tank.
地址 Toyama-shi JP