发明名称 BONDING METHOD AND METHOD OF MANUFACTURING MICROCHANNEL DEVICE
摘要 A bonding method includes ultrasonically welding a protruding portion extending on a surface of a first substrate member to a surface of a second substrate member by applying ultrasonic vibration to the first substrate member. A protruding stopper portion for stopping welding is provided on the surface of the first substrate member formed with the protruding portion, or on the surface of the second substrate member to come in contact with the protruding portion in a pressed state, to be disposed around the protruding portion in the pressed state. The ultrasonically welding includes a first process for applying ultrasonic vibration at amplitude as a first value to the first substrate member, and a second process for applying ultrasonic vibration to the first substrate member at amplitude as a second value lower than the first value after the first process.
申请公布号 US2015183154(A1) 申请公布日期 2015.07.02
申请号 US201414581814 申请日期 2014.12.23
申请人 FUJIFILM Corporation 发明人 KATO Kota
分类号 B29C65/08;B29C65/00 主分类号 B29C65/08
代理机构 代理人
主权项 1. A bonding method of bonding a first substrate member to a second substrate member, the method comprising ultrasonically welding a protruding portion extending on a surface of the first substrate member to a surface of the second substrate member by applying ultrasonic vibration to the first substrate member in a state where a top portion of the protruding portion is pressed against the surface of the second substrate member, wherein a protruding stopper portion for stopping welding is provided on the surface of the first substrate member formed with the protruding portion, or on the surface of the second substrate member to come in contact with the protruding portion in the pressed state, to be disposed around the protruding portion in the pressed state, and the ultrasonically welding includes a first process for applying ultrasonic vibration at amplitude as a first value to the first substrate member, and a second process for applying ultrasonic vibration to the first substrate member at amplitude as a second value lower than the first value after the first process.
地址 Tokyo JP