SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME

摘要

Achieved is a semiconductor light emitting element which is suppressed in the occurrence of leakage current and has enhanced luminous efficiency. A method for manufacturing a semiconductor light emitting element according to the present invention comprises: a step (a) for forming an n-type semiconductor layer on a substrate; a step (b) for forming an active layer on the n-type semiconductor layer by alternately laminating light emitting layers and blocking layers on the n-type semiconductor layer; and a step (c) for forming a p-type semiconductor layer on the active layer by supplying a p-type dopant. In the step (b), the final blocking layer that is closest to the p-type semiconductor layer among the blocking layers is formed to have a thickness that is larger than the diameter of a recess which is formed within the final blocking layer.