溅镀靶及其制造方法;SPUTTERING TARGET AND METHOD OF MANUFACTURING THE SAME

摘要

本发明之溅镀靶系由ZnSn氧化物所成之烧结体，该烧结体具有化学式：ZnxSnyOz(惟，x+y=2，且z=x+2y-α(x+2y))之组成，并满足缺陷系数α=0.002~0.03及氧之成分比z=2.1~3.8之条件，且对于前述烧结体之厚度方向之平均比电阻的偏差为50%以下。 A sputtering target of the present invention is a sintered compact consisting of ZnSn oxide which has a composition expressed by the chemical formula: ZnxSnyOz(x+y=2 and z=x+2y-α(x+2y)), and which has a deficiency coefficient α