METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a silicon carbide semiconductor device (1) includes the following steps. A silicon carbide substrate (13) is heated in an atmosphere containing oxygen, so as to form a gate insulating film (8) on and in contact with the silicon carbide substrate (13). The silicon carbide substrate (13) having the gate insulating film (8) is heated at 1250°C or more in an atmosphere containing nitrogen and nitrogen monoxide. A value obtained by dividing partial pressure of the nitrogen monoxide by a total of partial pressure of the nitrogen and the partial pressure of the nitrogen monoxide in the second heating step is more than 3% and less than 10%. Accordingly, there can be provided a method for manufacturing a silicon carbide semiconductor device (1) having high mobility.