| 摘要 |
<p>A semiconductor laser element having; a substrate (10), a first conductivity type semiconductor layer (12), an active layer (14) and a second conductivity type semiconductor layer (16) in that order on the substrate (10), a stripe-like ridge (18) formed on the upper face of the second conductivity type semiconductor layer (16), a conductive oxide layer (20) formed on the upper face of the ridge (18), a dielectric layer (24), with a refractive index that is lower than the refractive index of the semiconductor layer (16), formed on the side faces of the ridge (18), and a metal layer (22) formed so as to cover the conductive oxide layer (20) and the dielectric layer (24), the surface of the conductive oxide layer (20) is exposed from the dielectric layer (24), and the side faces of the conductive oxide layer (20) are sloped with respect to the upper face of the ridge (18), and the inclination angle of the side faces of the conductive oxide layer (20) with respect to the normal direction is greater than the inclination angle of the side faces of the ridge (18) with respect to the normal direction.</p> |
