窒化ガリウム系半導体エピタキシャルウェハ及びその製造方法,申请号JP20120048234-传众专利搜索

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发明名称	窒化ガリウム系半導体エピタキシャルウェハ及びその製造方法
摘要
申请公布号	JP5743928(B2)	申请公布日期	2015.07.01
申请号	JP20120048234	申请日期	2012.03.05
申请人		发明人
分类号	H01L21/205;C23C16/34	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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