发明名称 |
Semiconductor device with through-substrate via and method of producing a semiconductor device with through-substrate via |
摘要 |
A dielectric layer (2) is arranged on the main surface (10) of a semiconductor substrate (1), and a passivation layer (6) is arranged on the dielectric layer. A metal layer (3) is embedded in the dielectric layer above an opening (12) in the substrate, and a metallization (14) is arranged in the opening. The metallization contacts the metal layer and forms a through-substrate via to a rear surface (11) of the substrate. A layer or layer sequence (7, 8, 9) comprising at least one further layer is arranged on the passivation layer above the opening. In this way the bottom of the through-substrate via is stabilized. A plug (17) may additionally be arranged in the opening without filling the opening. |
申请公布号 |
EP2889901(A1) |
申请公布日期 |
2015.07.01 |
申请号 |
EP20130199683 |
申请日期 |
2013.12.27 |
申请人 |
AMS AG |
发明人 |
SCHRANK, FRANZ;CARNIELLO, SARA;ENICHLMAIR, HUBERT;KRAFT, JOCHEN;LÖFFLER, BERNHARD;HOLZHAIDER, RAINER |
分类号 |
H01L21/768;H01L23/00;H01L23/48;H01L27/146 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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