High frequency power amplifier

摘要

A high frequency power amplifier includes an FET chip, a wire connected at a first end to the FET chip, an input-side matching circuit substrate, a resistive element on the input-side matching circuit substrate and connected in series with the FET chip, a transmission portion of a conductive material on the input-side matching circuit substrate, in contact with one end of the resistive element, and connected to an input electrode, a wire connection portion of a conductive material on the input-side matching circuit substrate, in contact with a second end of the resistive element, and connected to a second end of the wire, and a shorting portion of a conductive material having a smaller width than the resistive element and on the resistive element, connecting the transmission portion to the wire connection portion.

主权项

1. A high frequency power amplifier comprising:
an FET chip; a wire connected at a first end to said FET chip; an input-side matching circuit substrate; a resistive element located on said input-side matching circuit substrate and connected in series with said FET chip; and a conductive material located on said input-side matching circuit substrate, wherein said conductive material includes
a transmission portion in contact with a first end of said resistive element and connected to an input electrode,a wire connection portion in contact with a second end of said resistive element, and connected to a second end of said wire, anda shorting portion having a smaller width than said resistive element, located on said resistive element, and connecting said transmission portion of said conductive material to said wire connection portion of said conductive material.