Electronic device including a trench and a conductive structure therein and a process of forming the same

摘要

An electronic device can include a transistor structure, including a patterned semiconductor layer overlying a substrate and having a primary surface. The electronic device can further include first conductive structures within each of a first trench and a second trench, a gate electrode within the first trench and electrically insulated from the first conductive structure, a first insulating member disposed between the gate electrode and the first conductive structure within the first trench, and a second conductive structure within the second trench. The second conductive structure can be electrically connected to the first conductive structures and is electrically insulated from the gate electrode. The electronic device can further include a second insulating member disposed between the second conductive structure and the first conductive structure within the second trench. Processing sequences can be used that simplify formation of the features within the electronic device.

主权项

1. A process of forming an electronic device comprising:
forming a semiconductor layer over a substrate, wherein the semiconductor layer has a primary surface; patterning the semiconductor layer to define a first trench and a second trench that extend from the primary surface towards the substrate; forming first conductive structures within the first and second trenches; forming a first insulating member within the first trench after forming the first conductive structures; forming a gate electrode within the first trench, wherein within the first trench, the first insulating member is disposed between the gate electrode and the first conductive structure; forming a source region adjacent to the first trench; forming a second insulating member within the second trench after forming the first conductive structures; and forming a second conductive structure, wherein within the second trench, the second insulating member is disposed between the second conductive structure and the first conductive structure, wherein the source region is electrically connected to the second conductive structure.