METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE WITH EXCELLENT CRYSTALLINE QUALITY

摘要

The present invention relates to a semiconductor light emitting device with excellent crystalline quality and a manufacturing method thereof. The manufacturing method of a nitride semiconductor light emitting device comprises the steps of: forming an SiO_2 layer on a substrate; forming a pillar pattern by etching the SiO_2 layer; and forming a plurality of nitride semiconductor layers including an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on the substrate on which the SiO_2 pillar pattern is formed.