Semiconductor device and method of forming the same

摘要

Provided is a semiconductor device including a substrate, an isolation structure, a gate structure, source and drain regions and a conductive layer. The source and drain regions are disposed in the substrate. The isolation structure is disposed between the source and drain regions. The gate structure is disposed on the substrate between the source and drain regions. The conductive layer is disposed on the substrate, extends from above the source region to above the isolation structure and is electrically connected to the source region. The substrate has first and second areas. The source region in the second area has a border curvature greater than that in the first area. The width of the portion of the conductive layer covering the isolation structure in the second area has a width greater than that in the first area.

主权项

1. A semiconductor device, comprising:
a source region and a drain region, having a first conductivity type and disposed in a substrate; an isolation structure, disposed between the source region and the drain region; a gate structure, disposed on the substrate between the source region and the drain region; a conductive layer, disposed on the substrate, at least extending from above the source region to above the isolation structure, and electrically connected to the source region, wherein the substrate comprises a first area and a second area, a border curvature of the source region in the second area is greater than a border curvature of the source region in the first area, and a width of the a portion of the conductive layer covering the isolation structure in the second area is greater than a width of another portion of the conductive layer covering the isolation structure in the first area.