发明名称 Proximity mask for ion implantation with improved resistance to thermal deformation
摘要 A proximity mask for ion implantation that is configured to resist thermal deformation in a direction normal to an ion beam projected on and through the mask. The mask may include a frame defining a central aperture and a plurality of ribs disposed within the aperture. The ribs may define a doping pattern and may be configured to deform in a direction normal to an ion beam projected thereon and to resist deformation in a direction orthogonal to an ion beam projected thereon upon being heated. Particularly, at least one of the ribs may include a bridge member, first and second perpendicular support legs extending perpendicularly from the bridge member, and first and second parallel support legs that extend perpendicularly from the first and second perpendicular support legs, respectively. The first and second parallel support legs may be attached to the frame.
申请公布号 US9070535(B2) 申请公布日期 2015.06.30
申请号 US201313926369 申请日期 2013.06.25
申请人 Varian Semiconductor Equipment Associates, Inc. 发明人 Riordon Benjamin B.
分类号 G21F5/00;H01J37/317;G03F1/20 主分类号 G21F5/00
代理机构 代理人
主权项 1. A proximity mask for ion implantation, the proximity mask comprising: a plurality of parallel, spaced apart, ribs connected to a frame; each of the plurality of ribs including a central bridge member connected at a first end to the frame by a first perpendicular support leg and a first parallel support leg, the first perpendicular support leg extending from the central bridge member in a direction normal to a front surface of the proximity mask, and the first parallel support leg extending from the first perpendicular support leg in a direction parallel to the front surface of the proximity mask; wherein when the rib is exposed to an ion beam, the rib is configured to thermally expand such that a distance between adjacent ones of said plurality of ribs remains substantially constant.
地址 Gloucester MA US