Solid state imaging device with microlens shifted from the center of the photo diode

摘要

A CCD image sensor, being a solid state imaging device, has four types of pixels, first to fourth pixels. The first to fourth pixels are arranged in a predetermined pattern. Each of the pixels has a PD and a microlens. Each of the microlens is arranged with its optical axis center eccentric or shifted in a predetermined direction from a center of a light receiving surface of the PD. A part of the microlens overlaps one or more adjacent pixels.

主权项

1. A solid state imaging device having a plurality of phase difference detection pixels arranged adjacent to each other, the phase difference detection pixels each comprising:
a photoelectric converter for photoelectrically converting incident light into charge and accumulating the charge; and a microlens provided to the each photoelectric converter, an optical axis of the microlens being eccentric to a center of the photoelectric converter such that a part of the microlens overlaps the adjacent phase difference detection pixel, the microlens condensing the light onto the photoelectric converter, wherein the phase difference detection pixels include: a first pixel with the microlens arranged eccentrically in a predetermined eccentricity direction; a second pixel with the microlens arranged eccentrically opposite to the eccentricity direction; a third pixel with the microlens arranged eccentrically in an orthogonal direction substantially orthogonal to the eccentricity direction; and a fourth pixel with the microlens arranged eccentrically opposite to the orthogonal direction.