Distributed current blocking structures for light emitting diodes

摘要

An LED device includes a strip-shaped electrode, a strip-shaped current blocking structure and a plurality of distributed current blocking structures. The current blocking structures are formed of an insulating material such as silicon dioxide. The strip-shaped current blocking structure is located directly underneath the strip-shaped electrode. The plurality of current blocking structures may be disc shaped portions disposed in rows adjacent the strip-shaped current blocking structure. Distribution of the current blocking structures is such that current is prevented from concentrating in regions immediately adjacent the electrode, thereby facilitating uniform current flow into the active layer and facilitating uniform light generation in areas not underneath the electrode. In another aspect, current blocking structures are created by damaging regions of a p-GaN layer to form resistive regions. In yet another aspect, current blocking structures are created by etching away highly doped contact regions to form regions of resistive contact between conductive layers.

主权项

1. A light emitting device comprising:
a semiconductor layer; a strip-shaped electrode formed on the semiconductor layer and including at least one closed opening having a rectangular shape in a plan view, wherein a current flowing through the strip-shaped electrode causes light to be emitted from the light emitting device; a strip-shaped current blocking structure disposed directly underneath the strip-shaped electrode; a first row of a plurality of current blocking structures formed along a periphery of the closed opening; and a second row of a plurality of current blocking structures formed parallel to the first row such that the first row is disposed between the second row and the strip-shaped current blocking structure, wherein a proportion of a region covered by the plurality of current blocking structures decreases in a direction away from the strip-shaped current blocking structure in the plan view, and the plurality of current blocking structures are formed inside the closed opening in the plan view.