Method for producing photoelectric conversion element

摘要

The method disclosed herein includes a first step of forming an i-type amorphous silicon layer 16 and an n-type amorphous silicon layer 14 on a light-receiving surface of an n-type monocrystalline silicon substrate 18; a second step of forming an i-type amorphous silicon layer 22a and an n-type amorphous silicon layer 23a on a backside surface of the n-type monocrystalline silicon substrate 18; and a third step of forming, after completion of the first step and the second step, an antireflection layer 12 on the n-type amorphous silicon layer 14, and subsequently forming an insulating layer 24a on the n-type amorphous silicon layer 23a.

主权项

1. A method for producing a photoelectric conversion element, the method comprising:
forming a first amorphous semiconductor layer on a light-receiving surface of a crystalline semiconductor substrate; forming a second amorphous semiconductor layer on a backside surface of the crystalline semiconductor substrate; and forming, after completion of the forming a first amorphous semiconductor layer and the forming a second amorphous semiconductor layer, a protective layer on the first amorphous semiconductor layer, and subsequently forming a protective layer on the second amorphous semiconductor layer; wherein the crystalline semiconductor substrate is of n-type, the first amorphous semiconductor layer comprises:
a first i-type amorphous semiconductor layer formed on the light-receiving surface of the crystalline semiconductor substrate; anda first n-type amorphous semiconductor layer formed on the first i-type amorphous semiconductor layer, and the second amorphous semiconductor layer comprises:
a second i-type amorphous semiconductor layer formed on the backside surface of the crystalline semiconductor substrate; anda second n-type amorphous semiconductor layer formed on the second i-type amorphous semiconductor layer the photoelectric conversion element further comprises:
a first electrode portion formed in a first region located above the second n-type amorphous semiconductor layer; anda second electrode portion formed in a second region located above a second p-type amorphous semiconductor layer formed on the backside surface, the second region being different from the first region.