发明名称 Nanogap sensor and method of manufacturing the same
摘要 A nanogap sensor includes a first layer in which a micropore is formed; a graphene sheet disposed on the first layer and including a nanoelectrode region in which a nanogap is formed, the nanogap aligned with the micropore; a first electrode formed on the grapheme sheet; and a second electrode formed on the graphene sheet, wherein the first electrode and the second electrode are connected to respective ends of the nanoelectrode region.
申请公布号 US9068914(B2) 申请公布日期 2015.06.30
申请号 US201213605711 申请日期 2012.09.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Shim Jeo-young;Jeon Tae-han;Eom Kun-sun;Lee Dong-ho;Jeong Hee-jeong;Cho Seong-ho
分类号 G01N27/414;G01N15/10;B82Y15/00;G01N33/487;G01N15/00 主分类号 G01N27/414
代理机构 Leydig, Voit & Mayer, Ltd. 代理人 Leydig, Voit & Mayer, Ltd.
主权项 1. A nanogap sensor comprising: a micropore layer comprising a micropore; a graphene sheet disposed on the micropore layer and comprising a nanoelectrode region, wherein the nanoelectrode region comprises a nanogap aligned with the micropore; a first electrode disposed on the graphene sheet; and a second electrode disposed on the graphene sheet, wherein the first electrode and the second electrode are connected to the nanoelectrode region at opposite ends of the nanoelectrode region relative to the nanogap, wherein a region of the graphene sheet other than the nanoelectrode region is an electrically inactive region.
地址 Suwon-Si KR