发明名称 A PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEM
摘要 <p>A PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEM (100) FOR SYNTHESIZING CARBON NANO-STRUCTURES COMPRISING A CHAMBER (101), ELECTRODES CONSIST OF ANODE (107) AND CATHODE (108) RESIDED IN SAID CHAMBER (101) AND A MEANS OF DIRECT CURRENT (102) APPLIED ON BOTH ELECTRODES TO GENERATE A GLOW DISCHARGE OF CARBON-CONTAINING GAS (104) DEPOSITED ON A SUBSTRATE-SUPPORTED CATALYST (103) SITUATED IN SAID CHAMBER (101) WHEREIN SAID CARBON-CONTAINING GAS (104) IS SUPPLIED WITH A CARRIER GAS (105) CHARACTERIZED IN THAT THE ENTRY POINT (121) OF SAID CARBON-CONTAINING GAS (104) OVER A SHOWER GAS RING SUPPLY (122) IS BETWEEN SAID ANODE (107) AND SAID CATHODE (108) TO MAINTAIN HIGH DENSITY PLASMA IN SAID CHAMBER (101) WHEREBY PRODUCING A GREATER AMOUNT OF CARBON NANO-STRUCTURES. THE MOST ILLUSTRATIVE DRAWING:</p>
申请公布号 MY154530(A) 申请公布日期 2015.06.30
申请号 MY2009PI00588 申请日期 2009.02.16
申请人 UNIVERSITI TEKNOLOGI MALAYSIA 发明人 AHMAD FAUZI ISMAIL;SUHAILA MOHD SANIP;MOHD. ABDUL RAZIS SAIDIN;NG BE CHEER;MOHD. SOHAIMI ABDULLAH;MADZLAN AZIZ
分类号 C23C16/26 主分类号 C23C16/26
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