发明名称 |
A PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEM |
摘要 |
<p>A PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEM (100) FOR SYNTHESIZING CARBON NANO-STRUCTURES COMPRISING A CHAMBER (101), ELECTRODES CONSIST OF ANODE (107) AND CATHODE (108) RESIDED IN SAID CHAMBER (101) AND A MEANS OF DIRECT CURRENT (102) APPLIED ON BOTH ELECTRODES TO GENERATE A GLOW DISCHARGE OF CARBON-CONTAINING GAS (104) DEPOSITED ON A SUBSTRATE-SUPPORTED CATALYST (103) SITUATED IN SAID CHAMBER (101) WHEREIN SAID CARBON-CONTAINING GAS (104) IS SUPPLIED WITH A CARRIER GAS (105) CHARACTERIZED IN THAT THE ENTRY POINT (121) OF SAID CARBON-CONTAINING GAS (104) OVER A SHOWER GAS RING SUPPLY (122) IS BETWEEN SAID ANODE (107) AND SAID CATHODE (108) TO MAINTAIN HIGH DENSITY PLASMA IN SAID CHAMBER (101) WHEREBY PRODUCING A GREATER AMOUNT OF CARBON NANO-STRUCTURES. THE MOST ILLUSTRATIVE DRAWING:</p> |
申请公布号 |
MY154530(A) |
申请公布日期 |
2015.06.30 |
申请号 |
MY2009PI00588 |
申请日期 |
2009.02.16 |
申请人 |
UNIVERSITI TEKNOLOGI MALAYSIA |
发明人 |
AHMAD FAUZI ISMAIL;SUHAILA MOHD SANIP;MOHD. ABDUL RAZIS SAIDIN;NG BE CHEER;MOHD. SOHAIMI ABDULLAH;MADZLAN AZIZ |
分类号 |
C23C16/26 |
主分类号 |
C23C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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