| 发明名称 |
ETCHING SOLUTION COMPOSITION FOR A METAL NITRIDE LAYER |
| 摘要 |
<p>The present invention relates to an etching solution composite of a metal nitride film. More specifically, to the etching solution composite of a metal nitride film capable of selectively etching a metal nitride film only by containing amino oxide series compounds, oxidizing agents and water.</p> |
| 申请公布号 |
KR20150071790(A) |
申请公布日期 |
2015.06.29 |
| 申请号 |
KR20130158446 |
申请日期 |
2013.12.18 |
| 申请人 |
DONGWOO FINE-CHEM CO., LTD. |
发明人 |
KIM, JEONG HWAN;YANG, JIN SEOK;LEE, KYONG HO |
| 分类号 |
C23F1/30 |
主分类号 |
C23F1/30 |
| 代理机构 |
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