发明名称 SOLAR CELL EMITTER REGION FABRICATION WITH DIFFERENTIATED P-TYPE AND N-TYPE REGION ARCHITECTURES
摘要 Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region.
申请公布号 US2015179838(A1) 申请公布日期 2015.06.25
申请号 US201314136751 申请日期 2013.12.20
申请人 SunPower Corporation 发明人 Rim Seung Bum;Smith David D.;Qiu Taiqing;Westerberg Staffan;Tracy Kieran Mark;Venkatasubramani Balu
分类号 H01L31/0224;H01L31/20;H01L31/068 主分类号 H01L31/0224
代理机构 代理人
主权项 1. A back contact solar cell, comprising: a substrate having a light-receiving surface and a back surface; a first polycrystalline silicon emitter region of a first conductivity type disposed on a first thin dielectric layer disposed on the back surface of the substrate; a second polycrystalline silicon emitter region of a second, different, conductivity type disposed on a second thin dielectric layer disposed on the back surface of the substrate; a third thin dielectric layer disposed laterally directly between the first and second polycrystalline silicon emitter regions; a first conductive contact structure disposed on the first polycrystalline silicon emitter region; and a second conductive contact structure disposed on the second polycrystalline silicon emitter region.
地址 San Jose CA US