发明名称 |
ASYMMETRIC STATE DETECTION FOR NON-VOLATILE STORAGE |
摘要 |
<p>Techniques are disclosed herein for determining whether there is a defect that occurred as a result of programming non-volatile storage elements. Example defects include: broken word lines, control gate to substrate shorts, word line to word line shorts, double writes, etc. The memory cells may be programmed such that there will be a substantially even distribution of the memory cells in different data states. After programming, the memory cells are sensed at one or more reference levels. Two sub-groups of memory cells are strategically formed based on the sensing to enable detection of defects in a simple and efficient manner. The sub-groups may have a certain degree of separation of the data states to avoid missing a defect. The number of memory cells in one sub-group is compared with the other. If there is a significant imbalance between the two sub-groups, then a defect is detected.</p> |
申请公布号 |
WO2015094707(A1) |
申请公布日期 |
2015.06.25 |
申请号 |
WO2014US68717 |
申请日期 |
2014.12.05 |
申请人 |
SANDISK TECHNOLOGIES INC. |
发明人 |
PATEL, ROHAN;KOH, PAO-LING;TAM, EUGENE |
分类号 |
G11C11/56;G11C16/34;G11C29/02 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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