METAL INTERCONNECT STRUCTURES AND FABRICATION METHOD THEREOF

摘要

A method is provided for fabricating a metal interconnection structure. The method includes providing a semiconductor substrate having an active region and an isolation structure surrounding the active region; and forming a metal layer on a surface of the semiconductor substrate. The method also includes forming a metal silicide layer on the active region by a reaction of the metal layer and material of the active regions; and forming an inter metal connection layer electrically connecting with the active regions on the isolation structure. Further, the method includes forming a dielectric layer covering the metal silicide layer, the isolation structure and the inter metal connection layer on the semiconductor substrate; and forming a metal contact via electrically connecting with the active region through the inter metal connection layer in the dielectric layer.

主权项

1. A method for fabricating a metal interconnection structure, comprising:
providing a semiconductor substrate having an active region and an isolation structure surrounding the active region; forming a metal layer on a surface of the semiconductor substrate; forming a metal silicide layer on the active regions by a reaction of the metal layer and material of the active regions; forming an intermetal connection layer electrically connecting with the active regions on the isolation structure; forming a dielectric layer covering the metal silicide layer, the isolation structure and the interconnection metal layer on the semiconductor substrate; and forming a metal contact via electrically connecting with active region through the inter metal connection layer in the dielectric layer; wherein the inter metal connection layer surrounds the metal contact via such that the metal contact is not in contact with the isolation structure or the semiconductor substrate to prevent a leakage current between the metal contact via and the semiconductor substrate.